Advanced Plating Solutions Our Services

Our Unique Plating Technology

Through-Silicon (TSV) & Through-Glass (TGV) Via Plating Technology

Precision Plating for TSV and TGV Applications

Bump/wiring formation (electrolytic UBM plating)/semiconductor wafer

Our plating technology for embedding into vias of wafers and glass is used to achieve goals like 3D semiconductor packaging, miniaturization, higher density, energy efficiency, high-speed communication, and improved frequency characteristics.

At Kiyokawa, we can embed metal through plating in both blind vias and through vias. This process provides high conductivity, low resistance, excellent thermal conductivity, and efficient wiring formation.

Main Substrates

Sizes
4 to 8-inch wafers
Materials
Si, SiC, glass, etc.

Track Record

Prototyping

Electrolytic Copper High-frequency characteristics, High-density, Miniaturization, Reduced power consumption
Electrolytic Nickel High-density, Miniaturization

* Please feel free to contact us about specifications not listed above.

Features

Void-Free Plating Technology for TSV and TGV

Cross-section of voidless embedded plating for TSV and TGV technologies.
Embedded plating cross section

Through-Silicon Vias (TSV) and Through-Glass Vias (TGV) are used to connect chips in 3D packaging, enabling enhanced performance through integration.

We offer plating services for the vias inside these structures. With our unique plating process, we can achieve void-free embedded plating. In addition to silicon and glass wafers, we can also plate through vias on ceramic and resin substrates.

Reducing CMP Polishing Load

Traditional plating methods required the removal of the plated layers on both sides of the wafer through CMP polishing after plating the vias. However, by using our proprietary plating method, we can reduce the amount of plating on both sides of the wafer, significantly shortening the CMP polishing process.

Traditional Method: CMP polishing required on both sides of the wafer.

Embedded cross section using conventional method
Embedded cross section using conventional method

(Current) Completed with CMP polishing of the wafer surface only!

Embedded cross section using a new unique method
Embedded cross section using a new unique method

Supports Various Via Shapes

Depending on the method used to form through vias, different via shapes can be created. The plating quality may vary depending on the via shape. We support a variety of via shapes, including straight, necked, tapered, and wall-uneven shapes. Please consult us regarding the choice of metal.

Diagram showing two types of via shapes: straight and pinched. Diagram showing two types of via shapes: tapered and wall-rough.
Diagram showing two types of via shapes

Non-Destructive Verification of Embedded Status

Our non-destructive analysis technology contributes to improved reliability, reduced evaluation time, and minimized sample volume. Using X-ray CT equipment, we can non-destructively inspect the filling status inside vias.

The sample sizes range from chip size up to a maximum of 300 mm square. We also offer evaluations using other methods such as laser microscopy and cross-sectional analysis.

X-ray CT transmission image
X-ray CT transmission image
X-Ray CT 3D Image
X-Ray CT 3D Image

Conformal Plating Technology

Cross-sectional SEM image of blind via with 5 μm width and 40 μm depth, showing conformal plating.
Cross-sectional SEM image of blind via with 5 μm width and 40 μm depth, showing conformal plating.

If you don’t need full via filling but simply require reliable conductivity, consider our conformal plating technology. Conformal plating ensures even coverage on via sidewalls and bottom surfaces, areas that can't be addressed by sputtering. Compared to via-filling plating, this method also leads to reduced plating time.

Downloadable Materials
  • Available Plating Types and Via Specifications
  • Via-Filling Plating Case Studies

FAQs

  • Can you handle square-shaped substrates?

    We may be able to accommodate this. Please contact us for more details.

  • What sizes have you successfully plated for via-filling?

    Our experience shows that we can plate vias with diameters ranging from approximately 30 to 50 μm, and wafer thicknesses of around 200 to 300 μm. Results can vary based on the via shape, so we will evaluate the conditions using actual samples.

  • Is via-filling possible not only for through vias but also for blind vias?

    Blind vias are much more challenging for via-filling compared to conformal plating. Depending on the via dimensions in your substrate, it may be possible to determine feasibility through evaluation. Please reach out to us via the inquiry form below to discuss your requirements.

Applications and Use Cases

  • Interposers (Substrates for stacking semiconductor IC chips)
  • 3D Packaging Substrates